GEM/2025/B/6692100

Indian Army

DIETRANSISTOR SI PNP BC557B,DIODE MBR 3060,IC DGTL SPL FN CKT UC2845,MICROCIRCUIT DIGITAL TYPE MAX 5721 EUA,MICROCIRCUIT LINEAR TYPE LMC 662,CONNECTOR FREE ELECTRICAL POST RFRT NANOHEX 250 VRMS DC MAX COAXIAL RF RECPTCLE RT ANGLE SNAPON,MICROCIRCUIT LINEAR LP 2951CM,MICROCIRCUIT TYPE LM 2903 DUAL CAMP,2N 3866 XSTRSIM NPN VHF HP,MICROCIRCUIT DIGITAL TYPE 74 HC4051B,TRANSISTOR FIELD EFFECT N CHANNEL TYPE DU 2820S,MICROCIRCUIT MEMORY ELECTRICALLY ERASIBLE PROM TYPE AT 28B V 256 20J1,ULTRA FAST RECTIFIER DIODE UF 4007,CAPACITOR FIXED POLARISED ELECTROLYTIC UF 10 25V 033,BIDIRECTIONAL TRANSLATOR,TRANSISTOR TYPE DU 1215S POWER REGULATOR,MICROCIRCUIT LINEAR VREG TYPE LT 1963 AEST 18,MICROCIRCUIT LINEAR VREG LT 1963 AEST,MICROCIRCUIT MEMORY 3.3V CMOS SRAM TYPE AS 7C 3256A 20T

https://bidplus.gem.gov.in/doc_cppp/h8sG4qwn9_2D2LZWem64z4S91GC-5fLmRd8n1D3Q5ArcZk_gX-1gtzY7QbwCNGn5R-h3dyw4P4dRGu5CI54L2Q

D V Karthikeyan

190007,190007,190007,190007,190007,190007,190007,190007,190007,190007,190007,190007,190007,190007,190007,190007,190007,190007,190007